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| Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features q q 2.8 -0.3 0.650.15 +0.2 2.9 -0.05 1.90.2 +0.2 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) 1.5 -0.05 +0.25 0.650.15 0.95 1 0.95 3 0.4 -0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD602 2SD602A 2SD602 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 1.1 -0.1 60 25 50 5 1 500 200 150 -55 ~ +150 V emitter voltage 2SD602A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : W(2SD602) X(2SD602A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD602 2SD602A 2SD602 2SD602A (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 10mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = -50mA*2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 30 max 0.1 0.16 -0.06 Ratings Unit +0.2 +0.1 1.45 Unit A V 30 60 25 50 5 85 40 0.35 200 6 *2 V V 160 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 0.6 V MHz 15 pF Pulse measurement Rank classification Rank hFE1 Q 85 ~ 170 2SD602 2SD602A WQ XQ R 120 ~ 240 WR XR S 170 ~ 340 WS XS Marking Symbol 1 Transistor PC -- Ta 240 800 700 200 2SD602, 2SD602A IC -- VCE Ta=25C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 400 300 200 100 3mA 2mA 1mA 800 VCE=10V Ta=25C 700 IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 600 500 Collector current IC (mA) 20 600 500 400 300 200 100 0 160 120 80 40 0 0 20 40 60 80 100 120 140 160 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=10 300 hFE -- IC VCE=10V Forward current transfer ratio hFE 250 Ta=75C 200 25C -25C 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 240 12 Cob -- VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB=10V Ta=25C IE=0 f=1MHz Ta=25C 120 VCER -- RBE IC=2mA Ta=25C 100 Transition frequency fT (MHz) 200 10 160 8 80 120 6 60 2SD602A 40 2SD602 20 80 4 40 2 0 -1 0 -3 -10 -30 -100 1 3 10 30 100 0 1 3 10 30 100 300 1000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 |
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